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Membership type: associate

ZHAN GAO GAO

Country of origin: China Currently in: Spain, MADRID General field of specialization: Engineering sciences
Academic Background

Degrees

2017 Doctorate Engineering sciences
2011 Master Physics
2004 Undergraduate Physics
2018 Undergraduate Other
Research and Profession

Current Research Activities

Engineering sciences

Fabrication and characterization of GaN based HEMTs and MOS HEMTs

Research Keywords: 
III-V semiconductor
GaN
AlGaN
high-k dielectrics
HEMTs
MOS HEMTs
electrics
microelectronics
reliability
thermal stablity

Publications resulting from Research: 


 Z. Gao, M. F. Romero, F. Calle. 2017, “Thermal and electrical stability of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors”. under review.
 Z. Gao, M. F. Romero, A. Redondo-Cubero, M. A. Pampillon, E. San Andrés, F. Calle. 2017, “Effects of Gd¬2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs”. IEEE Electron Device Letters, 38, pp. 611-614.
 Z. Gao, M. F. Romero, A. M. Pampillon, E. San Andres, F. Calle. 2016, “Thermal assessment of AlGaN/GaN MOS-HEMTs on Si substrate using Gd2O3 as gate dielectric”. IEEE Transactions on Electron Devices, 63, pp. 2729-2734 .



Current profession

Current professional activities type: 
Research