Membership type: full
ZHAN GAO GAOCountry of origin: China Currently in: Spain, MADRID General field of specialization: Engineering sciences
Degrees2017 Doctorate Engineering sciences2011 Master Physics2004 Undergraduate Physics2021 Undergraduate Other
Current Research Activities
Fabrication and characterization of GaN based HEMTs and MOS HEMTs
Publications resulting from Research:
Z. Gao, M. F. Romero, F. Calle. 2017, “Thermal and electrical stability of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors”. under review.
Z. Gao, M. F. Romero, A. Redondo-Cubero, M. A. Pampillon, E. San Andrés, F. Calle. 2017, “Effects of Gd¬2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs”. IEEE Electron Device Letters, 38, pp. 611-614.
Z. Gao, M. F. Romero, A. M. Pampillon, E. San Andres, F. Calle. 2016, “Thermal assessment of AlGaN/GaN MOS-HEMTs on Si substrate using Gd2O3 as gate dielectric”. IEEE Transactions on Electron Devices, 63, pp. 2729-2734 .
Current professionCurrent professional activities type:Research