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ZHAN GAO GAO

Country of origin: China Currently in: Spain, MADRID General field of specialization: Engineering sciences

Academic Background: Degrees

2017 Doctorate Engineering sciences

2011 Master Physics

2004 Undergraduate Physics

2024 Undergraduate Other
Research and Profession: Current Research Activities

Engineering sciences

Fabrication and characterization of GaN based HEMTs and MOS HEMTs

Research Keywords:

III-V semiconductor

GaN

AlGaN

high-k dielectrics

HEMTs

MOS HEMTs

electrics

microelectronics

reliability

thermal stablity

Publications resulting from Research:

 Z. Gao, M. F. Romero, F. Calle. 2017, “Thermal and electrical stability of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors”. under review.
 Z. Gao, M. F. Romero, A. Redondo-Cubero, M. A. Pampillon, E. San Andrés, F. Calle. 2017, “Effects of Gd¬2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs”. IEEE Electron Device Letters, 38, pp. 611-614.
 Z. Gao, M. F. Romero, A. M. Pampillon, E. San Andres, F. Calle. 2016, “Thermal assessment of AlGaN/GaN MOS-HEMTs on Si substrate using Gd2O3 as gate dielectric”. IEEE Transactions on Electron Devices, 63, pp. 2729-2734 .

Current profession

Current professional activities type:

Research